%PDF-1.4
%
1 0 obj
<>stream
application/pdfIEEEIEEE Electron Device Letters;2018;39;10;10.1109/LED.2018.2864562Current collapseGaN buffershigh resistivity siliconRF transistorssubstrate rampsBuffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si SubstratesHareesh ChandrasekarMichael J. UrenAbdalla EblablaHassan HirshyMichael A. CasbonPaul J. TaskerKhaled ElgaidMartin Kuball
IEEE Electron Device Letters1556 Oct. 20181039 10.1109/LED.2018.28645621559
endstream
endobj
2 0 obj
<>
endobj
3 0 obj
<>
endobj
4 0 obj
<>
endobj
5 0 obj
<>
endobj
6 0 obj
<>
endobj
7 0 obj
<>stream
xkǑ-YHR DR#R\3J
ίqq)jVksGF#"32vg/^~٧ '՛gtS;3ӥO'.}nM!ͱ1K^NnwW64tjl:yU(O^볔O\U-ϨMcu[߭M9-WMHʷNԫ}VOU_gu)kUvW>`,?ӴJ^.?F~Ra5*Lc]wSSh뿜־iiX6%=˵=-OɮoWgϯwO~N~g伷@8)5@@YN5^O9`$ߡ g I
^uCT3+EOz)z+3)**'V
&@Ԁ}nNx-ƍlʷ4\<1J]Ls`!ნTE
D4R[qNs~xUEoX
}1CIs\*fizARe.W=͍ƥ4NxHkۊn|:ER)Mf'5tN1&{~
)O✋6`Xb5Y}'{!Ob'!łe#UNJsi?I߶%J=kSݩ
1݄҇)3aV?-A8 iDiIGC6N/D9/oL|қ81'''m'%9kA4Wf_]}@*ϹPq@Q$a1?i[!X`ǦT.܄*/L<MO>\c1Þ&[yq6Rg`fq:d.~:E\Oh.Lj L7 Lx|Q(̈́)OKl#Ei~
{K'C" ifZ"&K,GXmCxh;.byL7%ϕ 8sSW8N{InaS&ҔJPj5ng<;Qm