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Number of items: 5.

Yi, Xin, Xie, Shiyu, Liang, Baolai L., Lim, L.W., Huffaker, Diana L., Tan, Chee H. and David, John P. R. 2020. Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Presented at: SPIE Security + Defence, Virtual, UK, 21-25 Sept 2020. Proceedings Volume 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III. UK: SPIE, 10.1117/12.2573766

Xie, Shiyu, Li, Haochen, Ahmed, Jamal and Huffaker, Diana L. 2020. 3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode. IEEE Photonics Journal 12 (4) , 6802008. 10.1109/JPHOT.2020.3006957

Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu, Kwan, Dominic C. M., Meng, Xiao, Zhang, Yanhua, Huffaker, Diana L. and Ma, Wenquan 2020. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer. Photonics Research 8 (5) , pp. 755-759. 10.1364/PRJ.385177
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Yi, Xin, Xie, Shiyu, Liang, Baolai, Lim, Leh W., Cheong, Jeng S., Debnath, Mukul C., Huffaker, Diana L., Tan, Chee H. and David, John P. R. 2019. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics 13 , pp. 683-686. 10.1038/s41566-019-0477-4

Yi, Xin, Xie, Shiyu, Liang, Baolai, Woon Lim, Leh, Zhou, Xinxin, Debnath, Mukul C., Huffaker, Diana, Hing Tan, Chee and David, John. P. R. 2018. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports 8 , 9107. 10.1038/s41598-018-27507-w

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