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Williams, Ashley, Thornton, J. M. C., MacDonald, John Emyr, van Silfhout, R., van der Veen, J., Finney, M., Johnson, A. and Norris, C. 1991. Strain relaxation during the initial stages of growth in Ge/Si(001). Physical Review B 43 (6) , pp. 5001-5011. 10.1103/PhysRevB.43.5001

Thornton, J. M. C., Williams, Ashley, MacDonald, John Emyr, van Silfhout, R.G., van der Veen, J.F., Finney, M. and Norris, C. 1991. The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9 (4) , pp. 2146-2150. 10.1116/1.585754

Pluis, B., Gay, J. M., Frenken, J. W. M., Gierlotka, S., Van Der Veen, J. F., MacDonald, John Emyr, Williams, Ashley, Piggins, N. and Als-Nielsen, J. 1989. X-ray reflectivity study of surface-initiated melting: Density profile at the pb(110) surface. Surface Science 222 (2-3) , L845-L852. 10.1016/0039-6028(89)90354-3

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