Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Brazzini, Tommaso, Casbon, Michael A. ORCID: https://orcid.org/0000-0002-8637-9888, Sun, Huarui, Uren, Michael J., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Jung, Helmut, Blanck, Herve and Kuball, Martin 2015. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation. Applied Physics Letters 106 (21) , 213502. 10.1063/1.4921848

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Abstract

Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high VDS and low IDS where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	12 September 2019
Date of Acceptance:	16 May 2015
Last Modified:	04 May 2023 17:41
URI:	https://orca.cardiff.ac.uk/id/eprint/93009

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