Computer simulation of Si and C atoms on SiC surfaces

Matthai, Clarence Cherian, Moran, G. J. and Morrison, I. 2011. Computer simulation of Si and C atoms on SiC surfaces. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. MRS Proceedings. Materials Research Society Conference Proceedings , vol.339 Cambridge University Press, pp. 21-26. 10.1557/PROC-339-21

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Abstract

The molecular dynamics method employing an empirical potential energy function to describe the Si-C interaction has been used to determine the minimum energy sites for Si and C adatoms on C-terminated SiC (001) substrates. It is found that whereas a single C adatom lies on the carbon dimer bond, this site only becomes energetically favourable for silicon adatoms when they interact to form a dimer pair

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Cambridge University Press
ISSN:	19464274
Last Modified:	04 Jun 2017 06:50
URI:	https://orca.cardiff.ac.uk/id/eprint/65310

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