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Reduction of electrical baseband memory effect in high-power LDMOS devices using optimum termination for IMD3 and IMD5 using active load-pull

Alghanim, A., Lees, Jonathan, Williams, T., Benedikt, Johannes and Tasker, Paul 2008. Reduction of electrical baseband memory effect in high-power LDMOS devices using optimum termination for IMD3 and IMD5 using active load-pull. Presented at: IEEE MTT-S International Microwave Symposium Digest, Atlanta, USA, pp. 415-418. 10.1109/MWSYM.2008.4633191

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Item Type: Conference or Workshop Item (Paper)
Schools: Engineering
Last Modified: 04 Jun 2017 02:02
URI: http://orca-mwe.cf.ac.uk/id/eprint/7825

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