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The effect of baseband impedance termination on the linearity of GaN HEMTs

Akmal, M., Lees, Jonathan, Bensmida, S., Woodington, S., Carrubba, V., Cripps, Stephen Charles, Benedikt, Johannes, Morris, K., Beach, M., McGeehan, J. and Tasker, Paul 2010. The effect of baseband impedance termination on the linearity of GaN HEMTs. Presented at: European Microwave Conference 2010, Paris, France, , vol. 561636. pp. 1046-1049.

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Item Type: Conference or Workshop Item (Paper)
Schools: Engineering
Last Modified: 04 Jun 2017 02:02
URI: http://orca-mwe.cf.ac.uk/id/eprint/7812

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