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Molecular dynamics simulation of transition metals as silicon substrates

Matthai, Clarence Cherian 1989. Molecular dynamics simulation of transition metals as silicon substrates. Molecular Simulation 3 (1-3) , pp. 101-114. 10.1080/08927028908034621

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Abstract

In recent years the growth of epitaxial layers and strained layer superlattices have been simulated by using the method of molecular dynamics. We have used this method to study the formation of transition metal silicides as the metal is deposited on a silicon substrate. We propose effective empirical potentials to describe the interaction between the metal and silicon and use the Dodson and Stillinger-Weber potentials to model the silicon-silicon interaction. We report on the evolution of nickel layers on the substrate as a function of temperature.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Molecular dynamics, nickel-silicon interfaces, silicides
Additional Information: Special Issue: Industrial Applications of Molecular Simulation—Part II
Publisher: Taylor & Francis
ISSN: 0892-7022
Last Modified: 04 Jun 2017 08:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/76056

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