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Field effect transistor on hetero-structure GaN/InxGa1-xN

Alexandrov, D., Dimitrrova, R., Butcher, K. S. A., Perks, Richard Marc and Wintrebert-Fouquet, Marie 2006. Field effect transistor on hetero-structure GaN/InxGa1-xN. Presented at: Canadian Conference on Electrical and Computer Engineering 2006 (CCECE '06), Ottawa, Canada, May 2006. Proceedings of the IEEE Canadian Conference on Electrical and Computer Engineering. IEEE, pp. 537-540. 10.1109/CCECE.2006.277693

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Abstract

Progress in the design of field effect transistor on hetero-structure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/InxGa1-xN hetero-structure is prepared to have both thickness ~50 mum and high specific resistance. The horizontal FET structure is prepared in order to achieve 1 mum gate length and 17 mum gate width. The technological methods used in the preparation of the FET structure are described. The static current-voltage characteristics are determined. It is found that there is gate threshold voltage that varies in range 2.1-2.4 V for n-channel MOS and in range -3.3--3.4 V for p-channel MOS . Also it is found that the drain current varies in the range ~7 muA if the drain voltage is 5 V and the operational point is chosen to be 3.5 V of the gate voltage. Both parameters the dynamic channel resistance and the amplification factor are determined as well

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Publisher: IEEE
ISBN: 1424400384
Last Modified: 04 Jun 2017 02:01
URI: http://orca-mwe.cf.ac.uk/id/eprint/7577

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