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Electronic transport in modulation-doped InSb quantum well heterostructures

Orr, J. M. S., Gilbertson, A. M., Fearn, M., Croad, O. W., Storey, C. J., Buckle, L., Emeny, M. T., Buckle, Philip Derek and Ashley, T. 2008. Electronic transport in modulation-doped InSb quantum well heterostructures. Physical Review B 77 (16) , 165334. 10.1103/PhysRevB.77.165334

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Abstract

The mobility and carrier concentration of a number of InSb-based modulation-doped quantum well heterostructures are examined over a range of temperatures between 4.5 and 300 K. Wide well (30 nm) and narrow well (15 nm) structures are measured. The temperature dependent mobilities are considered within a scattering model that incorporates polar optical and acoustic phonon scatterings, interface roughness scattering, and scattering from charged impurities both in the three-dimensional background and within a distributed “quasi-two-dimensional” doping layer. Room temperature mobilities as high as 51 000 cm2/V s are reported for heterostructures with a carrier concentration of 5.8×1011 cm−2, while low-temperature mobility (below 40 K) reaches 248 000 cm2/V s for a carrier concentration of 3.9×1011 cm−2. A Schrödinger–Poisson model is used to calculate band structures in the material and is shown to accurately predict carrier concentrations over the whole temperature range. Low-temperature mobility is shown to be dominated by remote ionized impurity scattering in wide well samples and by a combination of ionized impurity and interface roughness scattering in narrow well samples

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 04 Jun 2017 01:59
URI: http://orca-mwe.cf.ac.uk/id/eprint/7260

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