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Localization-enhanced biexciton binding in semiconductors

Langbein, Wolfgang Werner and Hvam, J. 1999. Localization-enhanced biexciton binding in semiconductors. Physical Review B 59 (23) , pp. 15405-15408. 10.1103/PhysRevB.59.15405

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Abstract

The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1−xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 04 Jun 2017 08:01
URI: http://orca-mwe.cf.ac.uk/id/eprint/71714

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