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Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures

Baldassarri, G., von Hogersthal, Hoger, Polimeni, A., Masia, Francesco, Bissiri, M., Capizzi, M., Gollub, D., Fischer, M. and Forchel, A. 2003. Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures. Physical Review B 67 , 233304. 10.1103/PhysRevB.67.233304

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Photoluminescence (PL) measurements under a magnetic field (B=0–12T) have been performed on In x Ga 1−x As 1−y N y /GaAs heterostructures for a wide range of N concentration (0<~y<~0.052). We find that the value of the diamagnetic shift depends on temperature as long as localized carrier recombination contributes sizably to the PL spectra. Consequently, magneto-PL data have been taken at sufficiently high temperature so as to eliminate such contribution. The diamagnetic shift of the free exciton energy has been analyzed using a theoretical model developed in two dimensions for arbitrary strengths of the magnetic field. From this analysis we derive values of the electron effective mass, which are in good agreement with those reported in the literature from different experimental techniques and measuring different physical quantities. Finally, our work suggests that the concept of effective mass based on the envelope-function approximation holds also in the In x Ga 1−x As 1−y N y /GaAs system, although the crystal translational symmetry is strongly perturbed by the nitrogen atoms.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 21 Oct 2017 07:16

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