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Early manifestation of localization effects in diluted Ga(AsN)

Masia, Francesco, Polimeni, A., von Hogersthal, G. Baldassarri Hoger, Bissiri, M., Capizzi, M., Klar, P. J. and Stolz, W. 2003. Early manifestation of localization effects in diluted Ga(AsN). Applied Physics Letters 82 (25) , pp. 4474-4476. 10.1063/1.1586787

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Abstract

The electron effective mass, me, and extent of exciton wave function, rexc, were derived in GaAs1-yNy (y=0.043%–0.5%) from magnetophotoluminescence measurements. With an increase in nitrogen concentration, we find that me and rexc undergo a rapid increase and squeezing, respectively, even for y≈0.1%. This quite early manifestation of nitrogen-induced localization effects imposes important constraints on existing theoretical models. © 2003 American Institute of Physics.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 21 Oct 2017 07:16
URI: http://orca-mwe.cf.ac.uk/id/eprint/69471

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