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Hydrogen-related effects in diluted nitrides

Polimeni, A., Masia, Francesco, Felici, M., von Hogersthal, G. Baldassarri Höger, Bissiri, M., Frova, A., Capizzi, M., Klar, P. J., Stolz, W., Buyanova, I. A., Chen, W. M., Xin, H. P. and Tu, C. W. 2003. Hydrogen-related effects in diluted nitrides. Physica B: Condensed matter 340-2 , pp. 371-376. 10.1016/j.physb.2003.09.064

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Abstract

Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented. In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation. In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Isoelectronic impurities; Hydrogen irradiation; Magneto-photoluminescence.
Publisher: Elsevier
ISSN: 0921-4526
Last Modified: 21 Oct 2017 07:16
URI: http://orca-mwe.cf.ac.uk/id/eprint/69470

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