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Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy

Losurdo, Maria, Giangregorio, Maria M., Bruno, Giovanni, Kim, Tong-Ho, Wu, Pae, Choi, Soojeong, Brown, April, Masia, Francesco, Capizzi, M. and Polimeni, A. 2007. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters 90 (1) , 011910-011910. 10.1063/1.2424664

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 21 Oct 2017 07:16
URI: http://orca-mwe.cf.ac.uk/id/eprint/69458

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