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Investigation of compositional disorder in GaAsN: H

Felici, M., Trotta, R., Masia, Francesco, Polimeni, A., Miriametro, A., Capizzi, M., Klar, P. J. and Stolz, W. 2007. Investigation of compositional disorder in GaAsN: H. Presented at: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24-28 July 2006. Published in: Jantsch, W. and Schaffler, F. eds. Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP Publishing, pp. 313-314. 10.1063/1.2729893

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Abstract

The compositional disorder in as‐grown and hydrogen irradiated GaAs1−x N x has been investigated by photoluminescence (PL) and PL excitation spectra. The static disorder introduced by N atoms in the GaAs host lattice is removed upon H irradiation of the samples, as shown by a significant decrease in the free‐exciton broadening. A theoretical model developed for a purely random alloy well accounts for the dependence of the free‐exciton PLE linewidth on N concentration.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: AIP Publishing
ISBN: 9780735403970
Last Modified: 21 Oct 2017 07:16
URI: http://orca-mwe.cf.ac.uk/id/eprint/69453

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