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The Schottky barrier height at the NiSi2-Si(111) interface

Rees, N. V. and Matthai, Clarence Cherian 1989. The Schottky barrier height at the NiSi2-Si(111) interface. Semiconductor Science and Technology 4 (5) , pp. 412-415. 10.1088/0268-1242/4/5/014

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Abstract

The authors have calculated the Schottky barrier heights for the type A and type B NiSi2-Si(111) interfaces. They have found that varying the amount of relaxation of the NiSi2-Si interplanar distance at the type B interface leads to a change in the barrier height of about 20%.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Last Modified: 04 Jun 2017 06:50
URI: http://orca-mwe.cf.ac.uk/id/eprint/65177

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