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The effect of metal layers on the band offsets at the silicon-germanium interface

Bass, J. M. and Matthai, Clarence Cherian 1991. The effect of metal layers on the band offsets at the silicon-germanium interface. Semiconductor Science and Technology 6 (1) , pp. 69-70. 10.1088/0268-1242/6/1/014

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Abstract

In order to understand the process of band-offset modification by the introduction of interlayers at semiconductor heterojunctions, the authors performed self-consistent ab initio pseudopotential calculations on the Si/Ge interface with In and Sb interlayers. The results of the calculations show a substantial reduction in the valence band offset with the Sb interlayer compared with no interlayer but no change when In is introduced. They suggest a possible reason for these different results

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Last Modified: 04 Jun 2017 06:49
URI: http://orca-mwe.cf.ac.uk/id/eprint/65074

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