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Schottky barriers and interface structure at silicide-silicon interfaces

Matthai, Clarence Cherian, Rees, N. V. and Shen, T. H. 1992. Schottky barriers and interface structure at silicide-silicon interfaces. Applied Surface Science 56-58 (Part 1) , pp. 525-530. 10.1016/0169-4332(92)90282-3

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Abstract

Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. One of the principal interests has centred on the mechanism for Fermi level pinning. The sililcide-silicon interface has been proposed as a system which is described by the metal induced gap states model. We have performed calculations on the NiSi2/Si(111) type A and type B interfaces as well as the NiSi2/Si(100) interface. In addition we have also studied the CoSi2/Si interface. For the NiSi2/Si(111) interface, we have further investigated the influence of point defects and hydrostatic pressure on the Schottky barrier height. Based on the results of our calculations we conclude that these interfaces do indeed subscribe to the MIGS model. We also present the results of some total energy calculations and discuss these with experimental observations

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0169-4332
Last Modified: 04 Jun 2017 06:49
URI: http://orca-mwe.cf.ac.uk/id/eprint/65066

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