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Reflectance anisotropy of the GaAs(001) (2×4) surface: Ab initio calculations

Morris, S., Bass, J. and Matthai, Clarence Cherian 1995. Reflectance anisotropy of the GaAs(001) (2×4) surface: Ab initio calculations. Physical Review B 52 (23) , pp. 16739-16743. 10.1103/PhysRevB.52.16739

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Abstract

Using an ab initio, nonlocal pseudopotential method, we have calculated the reflectance anisotropy of three different models of the GaAs(001) (2×4) surface. We find that the dominant contribution to the anisotropy comes from optical transitions between bulk valence-band states and unoccupied surface states. The best fit to the low-temperature experimental reflectance anisotropy spectrum, as observed in situ, is obtained from a linear combination of the calculated spectra from the different models taking ∼80% from that due to the β2(2×4) model and ∼20% from that due to the α(2×4) model

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 04 Jun 2017 06:48
URI: http://orca-mwe.cf.ac.uk/id/eprint/64955

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