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Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Fiore, A., Borri, Paola, Langbein, Wolfgang Werner, Hvam, J. M., Oesterle, U., Houdre, R., Stanley, R. P. and Ilegems, M. 2000. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm. Applied Physics Letters 76 (23) , pp. 3430-3432. 10.1063/1.126668

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Abstract

We present the time-resolved optical characterization of InAs/InGaAs self-assembledquantum dots emitting at 1.3 μm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 16 May 2019 23:08
URI: http://orca-mwe.cf.ac.uk/id/eprint/59844

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