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740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density

Lutti, Julie, Smowton, Peter Michael, Lewis, G. M., Krysa, A. B., Roberts, J. S., Houston, P. A., Xin, Y. C., Li, Y. and Lester, L. F. 2005. 740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density. Electronics letters 41 (5) , pp. 247-248. 10.1049/el:20057201

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Abstract

InP quantum-dot lasers grown on GaAs substrates and emitting in the 730-740 nm band with threshold current density as low as 190 A cm/sup -2/ for a 2000 /spl mu/m-long device with uncoated facets are reported.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institution of Engineering & Technology
ISSN: 0013-5194
Last Modified: 04 Jun 2017 06:24
URI: http://orca-mwe.cf.ac.uk/id/eprint/59546

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