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The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

Walker, C. L., Sandall, I. C., Smowton, Peter Michael, Sellers, I. R., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2005. The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters 17 (10) , pp. 2011-2013. 10.1109/LPT.2005.854393

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Abstract

We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-μm emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 ± 2 to 3.5 ± 2 cm-1, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
ISSN: 1041-1135
Last Modified: 04 Jun 2017 06:24
URI: http://orca-mwe.cf.ac.uk/id/eprint/59525

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