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Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm

Krysa, A. B., Liew, S. L., Lin, J. C., Roberts, J. S., Lutti, Julie, Lewis, G. M. and Smowton, Peter Michael 2007. Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm. Journal of Crystal Growth 298 , pp. 663-666. 10.1016/j.jcrysgro.2006.10.087

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Abstract

We present results for InP quantum dots (QDs) within a AlGaInP matrix grown by metalorganic vapor phase epitaxy (MOVPE) at an elevated temperatures of 690–730 °C. InP/AlGaInP QD lasers grown under these conditions operate at room temperature in a pulsed mode with a low threshold of 190 A/cm2 (38 A/cm2 per QD sheet) and lasing wavelength of 740 nm for a 2000 μm long device with uncoated facets.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0022-0248
Last Modified: 04 Jun 2017 06:24
URI: http://orca-mwe.cf.ac.uk/id/eprint/59514

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