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Temperature Dependence of Magnetic Anisotropy of Ga-substituted Cobal Ferrite

Ranvah, Naresh, Melikhov, Yevgen, Jiles, David, Snyder, John Evan, Moses, Anthony John, Williams, Paul Ieuan and Song, S.H. 2008. Temperature Dependence of Magnetic Anisotropy of Ga-substituted Cobal Ferrite. Journal of Applied Physics 103 (7) , 07E506. 10.1063/1.2832503

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The temperature dependence of magnetization, magnetic anisotropy, and coercive field of gallium-substituted cobalt ferrite was investigated for a series of compositions of CoGaxFe2−xO4 (0 ⩽ x ⩽ 0.8). Hysteresis loops were measured for each sample over the range of −5 T ⩽ μ0H ⩽ 5 T for selected temperatures between 10 and 400 K. The magnetization at 5 T and low temperatures was found to increase for the lower Ga contents (x = 0.2 and 0.4) compared to pure CoFe2O4, indicating that at least initially, Ga3+ substitutes predominantly into the tetrahedral sites of the spinel structure. The high field regions of these loops were modeled using the law of approach to saturation, which represents the rotational process, together with an additional linear forced magnetization term. The first order cubic magnetocrystalline anisotropy coefficient K1 was calculated from curve fitting to these data. It was found that K1 decreased with increasing Ga content at all temperatures. Both anisotropy and coercivity increased substantially as temperature decreased. Below 150 K, for certain compositions (x = 0, 0.2, 0.4), the maximum applied field of μ0H = 5 T was less than the anisotropy field and, therefore, insufficient to saturate the magnetization. In these cases, the use of the law of approach method can lead to calculated values of K1 which are lower than the correct value.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Uncontrolled Keywords: chemical exchanges, cobalt compounds, coercive force, ferrites, gallium compounds, magnetic anisotropy, magnetic hysteresis
Additional Information: Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at" 3 pp.
Publisher: American Institute of Physics
ISSN: 0021-8979
Last Modified: 02 Jan 2018 21:13

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