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Temperature-dependent gain and threshold in P-doped quantum dot lasers

Smowton, Peter Michael, Sandall, Ian C., Mowbray, D. J., Liu, Hui Yun and Hopkinson, M. 2007. Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 13 (5) , pp. 1261-1266. 10.1109/JSTQE.2007.903375

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Abstract

The role of changes in gain and nonradiative recombination as a function of temperature in p-doped quantum dot samples that exhibit a minimum in the threshold current versus temperature characteristics are examined using a detailed analysis based on the multisection measurement method. An injection level is defined as the difference between the transparency energy and the transition energy of the dot states so that the results at different temperatures may be compared. The temperature dependence of the injection level necessary to achieve the required gain produces the initial decrease in nonradiative recombination current and threshold current between 250-280 K. At higher temperatures, the nonradiative recombination increases due to both an increase in the injection level required to achieve a fixed value of gain and because of an increase in the nonradiative recombination at fixed injection level. Using measurements of the population inversion function it is shown that the reduction in the injection level required to achieve a fixed value of gain between 250-280 K is caused by the thermalization of the carrier distribution over this temperature range. Subsequent increases in the injection level required to achieve a fixed value of gain are due to the increasing thermal distribution of carriers over the available states at higher temperatures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISSN: 1077-260X
Last Modified: 04 Jun 2017 05:45
URI: http://orca-mwe.cf.ac.uk/id/eprint/53209

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