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Super-High-Frequency SAW Resonators on AlN/Diamond

Rodriguez-Madrid, J. G., Iriarte, G. F., Pedros, J., Williams, Oliver Aneurin, Brink, D. and Calle, F. 2012. Super-High-Frequency SAW Resonators on AlN/Diamond. IEEE Electron Device Letters 33 (4) , pp. 495-497. 10.1109/LED.2012.2183851

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This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: AlN/diamond; super-high-frequency band; surface acoustic wave (SAW) resonator; thickness influence
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Funders: EPSRC
Last Modified: 04 Jun 2017 05:36

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