Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Linewidth enhancement factor in InGaAs quantum-dot amplifiers

Schneider, S., Borri, Paola, Langbein, Wolfgang Werner, Woggon, U., Sellin, R. L., Ouyang, D. and Bimberg, D. 2004. Linewidth enhancement factor in InGaAs quantum-dot amplifiers. IEEE Journal of Quantum Electronics 40 (10) , pp. 1423-1429. 10.1109/JQE.2004.834779

Full text not available from this repository.

Abstract

We report systematic measurements of the linewidth enhancement factor (LEF) in an electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K to room temperature. At injection currents below transparency, the value of the linewidth enhancement factor of the ground-state interband (excitonic) transition is between 0.4 and 1, and increases with increasing carrier density. Additionally, we investigate the spectral dependence of the LEF by tuning the wavelength of our optical probe from below resonance with the ground state of the QDs up to resonance with the first optically active excited-state transition. We find a decrease of the LEF with increasing photon energy at all investigated temperatures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Amplifiers; QDs; quantum dots; semiconductor devices; semiconductor lasers; spectroscopy
Publisher: IEEE
ISSN: 0018-9197
Last Modified: 13 May 2019 20:39
URI: http://orca-mwe.cf.ac.uk/id/eprint/48841

Citation Data

Cited 82 times in Google Scholar. View in Google Scholar

Cited 79 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item