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Critical thickness and growth modes of SiC layers on Si substrates - a molecular dynamics study

Bhatti, Q. A. and Matthai, Clarence Cherian 1998. Critical thickness and growth modes of SiC layers on Si substrates - a molecular dynamics study. Applied Surface Science 123-4 , pp. 7-10. 10.1016/S0169-4332(97)00499-6

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Abstract

We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine the critical thickness for strain relief by islanding and misfit dislocation formation. We find that layer-by-layer growth followed by the formation of misfit dislocations at the interface is the preferred mode of growth.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0169-4332
Last Modified: 04 Jun 2017 05:04
URI: http://orca-mwe.cf.ac.uk/id/eprint/47968

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