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Magnetocrystalline anisotropy in single crystal Gd5Si2.7Gel.3

Jiles, David, Hadimani, R., Melikhov, Yevgen and Snyder, John Evan 2010. Magnetocrystalline anisotropy in single crystal Gd5Si2.7Gel.3. Presented at: American Physical Society (APS) March Meeting 2010, Portland, OR, USA, 15-19 March 2010.

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We have determined the magnetocrystalline anisotropy, easy and hard axes and the anisotropic constants for single crystal Gd5Si2.7Ge1.3 using magnetization vs. angle of rotation and magnetization vs. magnetic field measurements carried out on a vibrating sample magnetometer (VSM). Magnetization was measured as a function of angle with an applied field of 0.12 MA/m (1500 Oe) in the `ab', `bc' and `ca' planes with angles measured from the `a', `c' and `c' axes respectively. It was determined from the measurements that the `b' axis has the highest susceptibility and hence is the easy axis, while the `a' and `c' have lower and approximately equal susceptibilities and hence are the hard axes. The magnetic anisotropy energy Ean was calculated using E = μ0HM. The first order uniaxial anisotropic constant K1 was determined by fitting the Ean vs. θ curve to uniaxial anisotropy energy equation Ean = K1sin^2θand was determined to be 1.451x10^4 J/m^3. This research is supported by the Royal Society under a Wolfson Research Merit Award.

Item Type: Conference or Workshop Item (Paper)
Date Type: Completion
Status: Unpublished
Schools: Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
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Last Modified: 10 Jun 2020 14:18

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