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Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull

Akmal, Muhammad, Lees, Jonathan, Carrubba, Vincenzo, Bensmida, S., Woodington, S., Benedikt, Johannes, Morris, K, Beach, M., McGeehan, J. and Tasker, Paul J. 2010. Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull. Presented at: Asia-Pacific Microwave Conference (22nd : 2010), Yokahama-shi, Japan, 7-10 December 2010. 2010 Asia-Pacific Microwave Conference proceedings : APMC 2010 : Dec. 7-10, Yokohama, Japan. Tokyo, Japan: Institute of Electronics, Information and Communication Engineers (IEICE), pp. 5-8.

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Abstract

This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics extracted from measured input voltage and output current envelopes of a power device. Investigations have been carried out using a commercially available 10W GaN HEMT device characterised at 2GHz within a high-power modulated wavefor measurement system. Active IF loadpull has been employed to present specific baseband impedance environments, allowing the sensitivity of IMD symmetry to baseband impedance variations to be investigated.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: Institute of Electronics, Information and Communication Engineers (IEICE)
ISBN: 9781424475902
Related URLs:
Last Modified: 12 Jan 2018 20:17
URI: http://orca-mwe.cf.ac.uk/id/eprint/40009

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