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Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures

Cockburn, J. W., Teissier, R. J., Skolnick, M. S., Buckle, Philip Derek, Whittaker, D. M., Willcox, A. R. K., Smith, G. W., Hill, G. and Pate, M. A. 1994. Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures. Surface Science 305 (1-3) , pp. 375-379. 10.1016/0039-6028(94)90919-9

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Abstract

We present results of photoluminescence and electroluminescence spectroscopy carried out on GaAs/ Al0.33Ga0.67As double-barrier resonant-tunnelling structures having quantum wells of either 200 or 250 Å width. At high bias, luminescence recombination is observed from electrons in highly excited (n > 2) quantum-well (QW) states of the structures. Analysis of the luminescence intensities shows that when the structures are biased at the fourth electron resonance, a population inversion occurs between the n = 4 and n = 3 confined electron levels. In addition, when the 250 Å QW structure is biased at the fifth resonance, a population inversion occurs between the n = 5 and n = 4 confined levels. We show that such population inversions are explained by a rate-equation analysis of the excited-state populations.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0039-6028
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/37012

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