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Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure

Cockburn, J. W., Buckle, Philip Derek, Skolnick, M. S., Birkett, M. J., Teissier, R. and Smith, G. W. 1996. Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure. Journal of Applied Physics 79 (11) , pp. 8844-8846. 10.1063/1.362511

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, RECOMBINATION, TUNNEL EFFECT, RESONANCE, PHOTOLUMINESCENCE, QUANTUM WELLS, IV CHARACTERISTIC, HETEROSTRUCTURES
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0021-8979
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/37000

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