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Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures

Bridge, C. J., Dawson, P., Buckle, Philip Derek and Özsan, M. E. 2000. Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures. Semiconductor Science and Technology 15 (10) , pp. 975-979. 10.1088/0268-1242/15/10/308

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Abstract

As-grown n-CdTe/n-CdS solar cell structures deposited on tin oxide-coated glass have been studied using low temperature photoluminescence spectroscopy. The structures were annealed in air at temperatures up to 600 °C. For anneal temperatures of 400-450 °C, and above, acceptor related transitions at around 1.45, 1.51 and 1.56 eV are tentatively ascribed to copper, oxygen and VCd-related centres, respectively. Illuminated current-voltage measurements have shown that these findings are consistent with considerable improvements in short circuit current density that are believed to be associated with n- to p-type conversion of the CdTe film.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/36993

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