Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Nash, G. R., Nash, K. J., Smith, S. J., Bartlett, C. J., Jefferson, J. H., Buckle, L., Emeny, M. T., Buckle, Philip Derek and Ashley, T. 2005. Lateral n–i–p junctions formed in an InSb quantum well by bevel etching. Semiconductor Science and Technology 20 (2) , pp. 144-148. 10.1088/0268-1242/20/2/007

Full text not available from this repository.

Abstract

We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n–i–p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrödinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K, and rectifying characteristics were obtained over the whole temperature range.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/36986

Citation Data

Cited 13 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item