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Control of excited electron state populations in double-barrier resonant tunnelling structures

Buckle, Philip Derek, Cockburn, J. W., Teissier, R. J., Willcox, A. R. K., Whittaker, D. M., Skolnick, M. S., Smith, G. W., Grey, R., Hill, G. and Pate, M. A. 1994. Control of excited electron state populations in double-barrier resonant tunnelling structures. Semiconductor Science and Technology 9 (5S) , pp. 533-536. 10.1088/0268-1242/9/5S/036

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Abstract

In this paper we present an electroluminescence study of electron populations in the quasiconfined excited states of two GaAs-AlGaAs double-barrier resonant tunnelling structures. We investigate the dependence of the electron population on both electron collector barrier width, which controls the electron tunnelling-out time, and on the confined level energy spacing, which controls the intersubband scattering time. We show that the observed excited state populations are in good agreement with the predictions of a rate equation analysis.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/36985

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