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Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure

Cockburn, J. W., Skolnick, M. S., Whittaker, D. M., Buckle, Philip Derek, Willcox, A. R. K. and Smith, G. W. 1994. Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure. Applied Physics Letters 64 (18) , pp. 2400-2402. 10.1063/1.111627

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Abstract

We report evidence for a population inversion between excited electron states of the quantum well of a GaAs‐AlGaAs double barrier resonant tunneling structure (DBRTS). The relative populations of the states are determined by photoluminescence spectroscopy of the tunneling electrons in the structure. When the DBRTS is biased at the fourth electron resonance, the population of the n=4 confined level is found to be greater than that of the n=3 state. We show that such a population inversion is consistent with a rate equation analysis of the relative populations of the two levels when electrons tunnel into n=4.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: QUANTUM WELLS, POPULATION INVERSION, PHOTOLUMINESCENCE, TUNNEL EFFECT, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, TERNARY COMPOUNDS
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/36981

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