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Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Buckle, Philip Derek, Dawson, P., Hall, S. A., Chen, X., Steer, M. J., Mowbray, D. J., Skolnick, M. S. and Hopkinson, M. 1999. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. Journal of Applied Physics 86 (5) , pp. 2555-2561. 10.1063/1.371092

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, photoluminescence, radiative lifetimes, time resolved spectra, Monte Carlo methods, interface states, electron traps
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0021-8979
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:20
URI: http://orca-mwe.cf.ac.uk/id/eprint/36977

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