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Utilization of RF I-V waveform load-pull information to identify the role FET knee profile has on locating the efficiency maxima

Canning, Timothy A. J., Almuhaisen, Abdullah, Lees, Jonathan, Benedikt, Johannes, Cripps, Stephen Charles and Tasker, Paul J. 2011. Utilization of RF I-V waveform load-pull information to identify the role FET knee profile has on locating the efficiency maxima. Presented at: 2011 78th ARFTG Microwave Measurement Symposium (ARFTG), Tempe, AZ, USA, 1-2 December 2011. Proceedings of the 2011 78th ARFTG Microwave Measurement Symposium (ARFTG) - High Power RF Measurement Techniques. Los Alamitos, CA: IEEE, 10.1109/ARFTG78.2011.6183864

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Abstract

Typically performance maxima in terms of output power, efficiency, etc. are determined from analyzing, effectively “data mining”, load-pull measurements. This approach while identifying relevant design information provides no insight into the origin or location of the relevant maxima. However, if during load-pull measurements the RF I-V waveforms are also measured this insight is available. Measured RF I-V waveform load-pull information from a 10×75μm Gallium Arsenide transistor operating in class-B at 8GHz is used to correctly identify the effect of the knee region of the transistor I-V characteristic on power and efficiency. As a consequence the location of the drain efficiency contours on the Smith Chart are explained in terms of Vmin and current waveform compression.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: Amplifier Knee, class-B, high efficiency, power amplifier, waveform engineering
Publisher: IEEE
ISBN: 9781467302814
Last Modified: 04 Jun 2017 04:18
URI: http://orca-mwe.cf.ac.uk/id/eprint/36182

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