Williams, Oliver Aneurin and Jackman, R. B. 2004. Homoepitaxial growth for surface conductive device applications. Diamond and Related Materials 13 (2) , pp. 325-328. 10.1016/j.diamond.2003.11.004 |
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Abstract
A high growth rate process has been used to grow thin homoepitaxial diamond layers on type Ib single crystal substrates. The layers are p-type due to the presence of surface adsorbed hydrogen. STM measurements confirm a highly smooth surface (<1.5 nm Ra) and Hall effect measurements indicate very high mobility values within the p-type layer at sheet carrier concentrations that are high enough to be useful for device applications (140 cm2 V−1 s−1 @ 2.5×1012 cm−2).
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Homoepitaxial; Diamond growth; Carrier concentrations; Hall effect; Hydrogen surface conductivity |
Publisher: | Elsevier |
ISSN: | 0925-9635 |
Last Modified: | 04 Jun 2017 04:11 |
URI: | http://orca-mwe.cf.ac.uk/id/eprint/34137 |
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