Homoepitaxial growth for surface conductive device applications

Williams, Oliver Aneurin and Jackman, R. B. 2004. Homoepitaxial growth for surface conductive device applications. Diamond and Related Materials 13 (2) , pp. 325-328. 10.1016/j.diamond.2003.11.004

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Abstract

A high growth rate process has been used to grow thin homoepitaxial diamond layers on type Ib single crystal substrates. The layers are p-type due to the presence of surface adsorbed hydrogen. STM measurements confirm a highly smooth surface (<1.5 nm Ra) and Hall effect measurements indicate very high mobility values within the p-type layer at sheet carrier concentrations that are high enough to be useful for device applications (140 cm2 V−1 s−1 @ 2.5×1012 cm−2).

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Homoepitaxial; Diamond growth; Carrier concentrations; Hall effect; Hydrogen surface conductivity
Publisher:	Elsevier
ISSN:	0925-9635
Last Modified:	04 Jun 2017 04:11
URI:	http://orca-mwe.cf.ac.uk/id/eprint/34137

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