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Electrical conduction in polycrystalline CVD diamond: Temperature dependent impedance measurements

Ye, H., Williams, Oliver Aneurin, Jackman, R. B., Rudkin, R. and Atkinson, A. 2002. Electrical conduction in polycrystalline CVD diamond: Temperature dependent impedance measurements. physica status solidi (a) 193 (3) , pp. 462-469. 10.1002/1521-396X(200210)193:3<462::AID-PSSA462>3.0.CO;2-L

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In this paper, we report the first measurement of impedance on freestanding diamond films from 0.1 Hz to 10 MHz up to 300 °C. A wide range of CVD materials have been investigated, but here we concentrate on ‘black’ diamond grown by MWPECVD. The Cole–Cole (Z′ via Z″) plots are well fitted to a RC parallel circuit model and the equivalent resistance and capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 62 MΩ at room temperature to 4 kΩ at 300 °C, with an activation energy around 0.51 eV. The equivalent capacitance is maintained at the level of 102 pF up to 300 °C, suggesting that the diamond grain boundaries are dominating the conduction. At 400 °C, the impedance at low frequencies shows a linear tail, which can be explained that the ac polarization of diamond/Au interface occurs.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: 68.55.Jk; 73.61.Cw
Publisher: Wiley
ISSN: 1862-6319
Last Modified: 04 Jun 2017 04:11

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