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Low temperature properties of the p-type surface conductivity of diamond

Nebel, C. E., Ertl, F., Sauerer, C., Stutzmann, M., Graeff, C. F. O., Bergonzo, R., Williams, Oliver Aneurin and Jackman, R. B. 2002. Low temperature properties of the p-type surface conductivity of diamond. Diamond and Related Materials 11 (3-6) , pp. 351-354. 10.1016/S0925-9635(01)00586-6

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Hydrogen terminated CVD poly- and monocrystalline high pressure high temperature (IIa) diamonds have been investigated by conductivity, magnetoresistivity and Hall experiments in the temperature regime 0.34–350 K. Hole transport even at lowest temperature in the valence band is detected. Below a critical temperature of 20–70 K a decreasing fraction of holes propagates with increasing mobilities of up to 400 cm2/Vs. A transport model is discussed where the hole accumulation layer is generated by diffusion of valence band electrons into surface adsorbates. The propagation of holes in this channel is dominated by electronic states, which are partially localized due to non-perfect hydrogen termination, CH dipole disorder or surface roughness and partially extended.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Hydrogen terminated diamond; Surface conductivity; Low temperature magneto-transport; Hall effect; Conductivity
Publisher: Elsevier
ISSN: 0925-9635
Last Modified: 04 Jun 2017 04:11

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