Nebel, C. E., Ertl, F., Sauerer, C., Stutzmann, M., Graeff, C. F. O., Bergonzo, R., Williams, Oliver Aneurin and Jackman, R. B. 2002. Low temperature properties of the p-type surface conductivity of diamond. Diamond and Related Materials 11 (3-6) , pp. 351-354. 10.1016/S0925-9635(01)00586-6 |
Abstract
Hydrogen terminated CVD poly- and monocrystalline high pressure high temperature (IIa) diamonds have been investigated by conductivity, magnetoresistivity and Hall experiments in the temperature regime 0.34–350 K. Hole transport even at lowest temperature in the valence band is detected. Below a critical temperature of 20–70 K a decreasing fraction of holes propagates with increasing mobilities of up to 400 cm2/Vs. A transport model is discussed where the hole accumulation layer is generated by diffusion of valence band electrons into surface adsorbates. The propagation of holes in this channel is dominated by electronic states, which are partially localized due to non-perfect hydrogen termination, CH dipole disorder or surface roughness and partially extended.
Item Type: | Article |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Hydrogen terminated diamond; Surface conductivity; Low temperature magneto-transport; Hall effect; Conductivity |
Publisher: | Elsevier |
ISSN: | 0925-9635 |
Last Modified: | 04 Jun 2017 04:11 |
URI: | http://orca-mwe.cf.ac.uk/id/eprint/34127 |
Citation Data
Cited 52 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
![]() |
Edit Item |