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Hydrogen-induced transport properties of holes in diamond surface layers

Nebel, C. E., Sauerer, C., Ertl, F., Stutzmann, M., Graeff, C. F. O., Bergonzo, P., Williams, Oliver Aneurin and Jackman, R. 2001. Hydrogen-induced transport properties of holes in diamond surface layers. Applied Physics Letters 79 (27) , pp. 4541-4543. 10.1063/1.1429756

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: diamond, hydrogen, surface conductivity, surface topography, Hall effect, hole density, hole mobility, localised states
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 04:11

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