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Low temperature surface conductivity of hydrogenated diamond

Sauerer, C., Ertl, F., Nebel, C. E., Stutzmann, M., Bergonzo, P., Williams, Oliver Aneurin and Jackman, R. A. 2001. Low temperature surface conductivity of hydrogenated diamond. physica status solidi (a) 186 (2) , pp. 241-247. 10.1002/1521-396X(200108)186:2<241::AID-PSSA241>3.0.CO;2-1

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Conductivity and Hall experiments are performed on hydrogenated poly-CVD, atomically flat homoepitaxially grown Ib and natural type IIa diamond layers in the regime 0.34 to 400 K. For all experiments hole transport is detected with sheet resistivities at room temperature in the range 104 to 105 Ω/□. We introduce a transport model where a disorder induced tail of localized states traps holes at very low temperatures (T < 70 K). The characteristic energy of the tail is in the range of 6 meV. Towards higher temperatures (T > 70 K) the hole density is approximately constant and the hole mobility μ is increasing two orders of magnitude. In the regime 70 K < T < 200 K, μ is exponentially activated with 22 meV, above it follows a ∼T3/2 law. The activation energy of the hole density at T > 70 K is governed by the energy gap between holes trapped in the tail and the mobility edge which they can propagate. In the temperature regime T > 25 K an increasing hole mobility is detected which is attributed to transport in delocalized states at the surface.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: 72.20.Fr; 72.80.Cw; 72.80.Ng; 73.20.At; 73.20.Fz; 73.25.+i;S5
Publisher: Wiley
ISSN: 1862-6319
Last Modified: 04 Jun 2017 04:11

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