Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers

Smowton, Peter Michael and Blood, Peter 1995. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers. Applied Physics Letters 67 (9) , pp. 1265-1267. 10.1063/1.114392

Preview

PDF - Published Version Download (253kB) | Preview

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	GALLIUM PHOSPHIDES, INDIUM PHOSPHIDES, ALUMINIUM PHOSPHIDES, QUANTUM WELLS, HETEROJUNCTIONS, SEMICONDUCTOR LASERS, THRESHOLD CURRENT, TEMPERATURE DEPENDENCE, ACTIVATION ENERGY, ARRHENIUS EQUATION, TRANSPORT THEORY
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	04 Jun 2017 04:01
URI:	http://orca-mwe.cf.ac.uk/id/eprint/30880

Citation Data

Cited 14 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item