Enriched residual free bubbles for semiconductor device simulation

Simpson, Robert Napier, Bordas, Stephane Pierre Alain ORCID: https://orcid.org/0000-0001-8634-7002, Asenov, A. and Brown, A. R. 2012. Enriched residual free bubbles for semiconductor device simulation. Computational Mechanics 50 (1) , pp. 119-133. 10.1007/s00466-011-0658-6

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Abstract

This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	residual-free bubble enrichment ; stabilisation ; semiconductor device simulation ; finite element
ISSN:	0178-7675
Last Modified:	19 Oct 2022 09:54
URI:	https://orca.cardiff.ac.uk/id/eprint/22611

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