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Using active IF load-pull to investigate electrical base-band induced memory effects in high-power LDMOS transistors

Alghanim, A., Lees, Jonathan, Williams, T., Benedikt, Johannes and Tasker, Paul J. 2007. Using active IF load-pull to investigate electrical base-band induced memory effects in high-power LDMOS transistors. Presented at: Asia-Pacific Microwave Conference (APMC 2007), Bangkok, Thailand, IEEE, pp. 1-4. 10.1109/APMC.2007.4554737

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Abstract

Memory effects are generally attributable to thermal, electrical, packaging and/ or surface effects. This behaviour in turn impacts overall linearity and importantly the suitability of a power amplifier (PA) to linearisation through pre-distortion. It is assumed that electrical memory introduced by the low-frequency baseband impedance environments associated with the power amplifier bias insertion networks being frequency dependent represents a significant contributor to overall observed memory effects in high-power LDMOS PA design. In this work, baseband or IF active load-pull is used to provide an effective way to engineer all the significant IF components generated as a result of multi-tone excitation, independent of modulation frequency. Specific IF impedance environments are presented to a device with this approach in order to probe the sensitivity to IF impedance variations. These investigations are performed on a 12 W LDMOS device characterised at 2.1 GHz within a purpose built, high-power measurement system, that allows the collection of both RF and IF voltage and current waveforms along with all associated impedances.

Item Type: Conference or Workshop Item (Paper)
Schools: Engineering
Publisher: IEEE
Last Modified: 04 Jun 2017 03:26
URI: http://orca-mwe.cf.ac.uk/id/eprint/21385

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