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Gate dependence of spin-splitting in an InSb/InAlSb quantum well

Branford, W. R., Gilbertson, A. M., Buckle, Philip Derek, Buckle, L., Ashley, T., Magnus, F., Clowes, S. K., Harris, J. J. and Cohen, L. F. 2008. Gate dependence of spin-splitting in an InSb/InAlSb quantum well. Presented at: 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007. Narrow gap semiconductors 2007: proceedings of the 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007. Springer Proceedings in Physics , vol. 119. Dordrecht: Springer, pp. 3-5. 10.1007/978-1-4020-8425-6_1

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Abstract

A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-resolved Shubnikov-de Haas oscillations are observed. A preliminary analysis of the Shubnikov-de Haas oscillations indicates a strong gate bias dependence of the Rashba spin-orbit term.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Springer
ISBN: 9781402084249
ISSN: 0930-8989
Last Modified: 04 Jun 2017 03:12
URI: http://orca-mwe.cf.ac.uk/id/eprint/18020

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