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InP-GaInP quantum-dot lasers emitting between 690-750 nm

Smowton, Peter Michael, Lutti, Julie, Lewis, Gareth Michael, Krysa, A. B., Roberts, J. S. and Houston, P. A. 2005. InP-GaInP quantum-dot lasers emitting between 690-750 nm. IEEE Journal of Selected Topics in Quantum Electronics 11 (5) , pp. 1035-1040. 10.1109/JSTQE.2005.853838

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Abstract

We describe the growth, material characterization, and device characterization of InP-GaInP quantum-dot lasers for operation in the wavelength range 690-750 nm. We show that the growth conditions have a major influence on the form of the gain spectrum. Relatively flat gain can be achieved over a spectral width of 90 nm at 300 K using samples containing a bimodal distribution of dot sizes, or narrower gain spectra at shorter wavelength can be achieved by suppressing the bimodal distribution by using (211)B substrates. Optimization of samples grown on substrates with the growth surface of (100) misorientated by 10

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Quantum dots ; semiconductor lasers
ISSN: 1077-260X
Last Modified: 04 Jun 2017 01:40
URI: http://orca-mwe.cf.ac.uk/id/eprint/1577

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