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The benefit of GaN characteristics over LDMOS for linearity improvement using drain modulation in power amplifier system

Yusoff, Zubaida Binti, Akmal, Muhammad, Carrubba, Vincenzo, Lees, Jonathan, Benedikt, Johannes, Tasker, Paul J. and Cripps, Stephen Charles 2011. The benefit of GaN characteristics over LDMOS for linearity improvement using drain modulation in power amplifier system. Presented at: 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, Vienna, Austria, 18-19 April 2011. 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC 2011). New York: IEEE, pp. 109-112. 10.1109/INMMIC.2011.5773334

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Abstract

This paper reports that significant linearity improvement can be obtained in gallium nitride (GaN) RF power amplifiers (RFPAs) in comparison to laterally diffused metal oxide semiconductor (LDMOS) RFPAs through the use of a modulated drain supply. It is shown that the gain characteristic of a GaN RFPA has significant variation with the drain bias voltage and this results in a 10-20 dB reduction in intermodulation (IM) levels. The LDMOS RFPA was measured and the result showed that the gain of LDMOS did not change substantially with drain bias voltage. As a consequence, when the LDMOS RFPA is measured using modulated drain bias, the IM levels showed only a much smaller improvement. These results appear to indicate that GaN devices have an important advantage over LDMOS in linear RFPA applications.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Uncontrolled Keywords: Gallium nitride (GaN); Intermodulation; Linearity; Power amplifiers
Publisher: IEEE
ISBN: 9781457706509
Last Modified: 10 Jan 2018 05:58
URI: http://orca-mwe.cf.ac.uk/id/eprint/15572

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